Envié una solicitud electrónica. El proceso duró 4 semanas. Acudí a una entrevista en pSemi (San Diego, CA) en sept 2012
Entrevista
Initial 45 minutes technical interview followed by an onsite interview. Asked the details about the research project on my resume. Other questions involve device physics in MOSFET and HEMT devices.
Preguntas de entrevista [1]
Pregunta 1
What equation describe the filed-charge characteristic in the N+ AlGaAs layer of the HEMT device.
