Similar to other reviews lately, I was ghosted immediately after receiving a date and time for an interview. I applied online and received an email form a recruiter expressing their interest and giving me an availability form to fill out for scheduling a phone screen interview. After doing this, I heard back from the recruiter within a day or two about the day and time of the phone screen and that I would mainly be going over my resume with the team. On the day of the interview, my interview time came and went without hearing anything. I called the recruited and left a message and sent an email the following day but never received any sort of response. This was incredibly disappointing and unprofessional to say the least, and I have to say that it has left me with a negative impression of a company that I had held a lot of respect for.
8
Experiencia neutra
Entrevista normal
Solicitud
Envié una solicitud electrónica. Acudí a una entrevista en SpaceX (Brownsville, TX) en feb 2026
Entrevista
First interview was ~30 minutes, mostly talking about the salary and culture of working there. Some light technical questions like what is Young's Modulus and stuff like that. Second round was more about wanting to see how you think, they set up a test failure scenario and wanted me to walk through how I would figure out what the issue was/mitigate it in the future.
Acudí a una entrevista en SpaceX (Los Angeles, CA)
Entrevista
The first step typically involves a call with HR or a recruiter. They’ll ask basic questions about your resume, motivation for applying, and why you're interested in the company. It’s also an opportunity for them to confirm logistical details, like availability and compensation expectations.
Resume walkthrough and technical questions. Wanted to know basically the entire scope of my academic knowledge. Ask fundamental circuits and transistor questions. Asked me about design choices in nearly all my projects.
Preguntas de entrevista [1]
Pregunta 1
Explain the relationship between the source, drain, and gate of a MOS device.